STT3423P -5.7 a, -20 v, r ds(on) 42 m ? p-channel enhancement mode mos.fet elektronische bauelemente 23-jul-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ?? 6 1 3 2 5 4 rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mo sfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmc ia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe tsop-6 saves board space. ? fast switching speed. ? high performance trench technology. product summary product summary v ds (v) r ds (on) (m ? ? i d (a) -20 42@v gs = -4.5v -5.7 57@v gs = -2.5v -4.9 80@v gs = -1.8v -4.1 absolute maximum ratings(t a =25 c unless otherwise noted) parameter symbol ratings unit maximum drain-source voltage v ds -20 v gate-source voltage v gs 8 v continuous drain current a i d @t a =25 i d @t a =70 -5.7 a -4.7 pulsed drain current b i dm 20 a continuous source current (diode conduction) a i s -1.7 a power dissipation a p d @t a =25 2.0 w p d @t a =70 1.3 operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings parameter symbol maximum unit maximum junction to ambient a t Q 5 sec r ? ja 50 c / w steady state 90 notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e ? ? gate ? ? source ???? ? drain
STT3423P -5.7 a, -20 v, r ds(on) 42 m ? p-channel enhancement mode mos.fet elektronische bauelemente 23-jul-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) -0.4 - - v v ds =v gs , i d = -250ua gate-body leakage i gss - - 100 na v ds = 0v, v gs = 8v zero gate voltage drain current i dss - - -1 ua v ds = -16v, v gs = 0v - - -5 v ds = -16v, v gs =0 v, t j = 55 c on-state drain current a i d(on) -20 - - a v ds = -4.5v, v gs = -4.5 v drain-source on-resistance a r ds(on) - - 42 m ? v gs = -4.5v, i d = -5.7a - - 57 v gs = -2.5v, i d = -4.9a - - 80 v gs = -1.8v, i d = -4.1a forward transconductance a g fs - 10 - s v ds = -10v, i d = -4.9a diode forward voltage a v sd - -0.7 - v i s = 1.7a, v gs = 0v dynamic b total gate charge q g - 8 - nc v ds = -10v, v gs = -4.5v, i d = -5.7a gate-source charge q gs - 1.8 - gate-drain charge q gd - 1.9 - turn-on delay time t d(on) - 22 - ns v dd = -10v, v gen = -4.5v, r l = 6 ? , i d = -1a rise time t r - 35 - turn-off delay time t d(off) - 45 - fall time t f - 25 - notes a. pulse test pw Q 300 us duty cycle Q 2%. b. guaranteed by design, not su bject to production testing.
STT3423P -5.7 a, -20 v, r ds(on) 42 m ? p-channel enhancement mode mos.fet elektronische bauelemente 23-jul-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
STT3423P -5.7 a, -20 v, r ds(on) 42 m ? p-channel enhancement mode mos.fet elektronische bauelemente 23-jul-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually.
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